oxygen vacancy中文是什么意思

• 氧缺位

• "oxygen"中文翻译    n. 【化学】氧，氧气。
• "vacancy"中文翻译    n. 1.空虚，空；空间，空隙，空处；空地，空房(等)。 ...
• "vacancy concentration of oxygen" 中文翻译 :    氧离子缺位浓度
• "no vacancy" 中文翻译 :    车位已满请勿进入; 客满; 位已满请勿进入
• "vacancy" 中文翻译 :    n. 1.空虚，空；空间，空隙，空处；空地，空房(等)。 2.精神空虚，心不在焉，没精神，出神，茫然若失。 3.空位，空额。 4.闲暇；无所事事。 gaze into [at, on] vacancy凝视空中。 fill a vacancy in one's knowledge 填补知识空白。 fill (up) the vacancy (by election) (用选举办法)补充空额。 when a vacancy occurs 有空额的时候。
• "a vacancy in the cabinet" 中文翻译 :    内阁中的空缺
• "anion vacancy" 中文翻译 :    阴离子空位; 阴离子空穴
• "anionic vacancy" 中文翻译 :    阴离子空位
• "anticipated vacancy" 中文翻译 :    预期空缺
• "barium vacancy" 中文翻译 :    钡空位
• "casual vacancy" 中文翻译 :    空置单位; 临时空缺
• "cation vacancy" 中文翻译 :    阳离子空位
• "cationic vacancy" 中文翻译 :    阳离子空位
• "coupled vacancy" 中文翻译 :    空位对
• "diffusion of vacancy" 中文翻译 :    空位扩散
• "displaced vacancy" 中文翻译 :    位移空位
• "displacement vacancy" 中文翻译 :    位移空位
• "domestic vacancy" 中文翻译 :    空置住宅楼宇；空置住宅单位
• "double vacancy" 中文翻译 :    双空位
• "electron vacancy" 中文翻译 :    电子空位
• "excess vacancy" 中文翻译 :    过剩空位
• "fill a vacancy" 中文翻译 :    填补空白, 补缺
• "frenkel vacancy" 中文翻译 :    夫伦克耳空位; 弗伦克耳空位
• "have a vacancy for" 中文翻译 :    有空的
• "immediate vacancy" 中文翻译 :    即时空缺

• On the other hand , oxygen plasma treatment makes ito film oxidized further , which decreases the number of oxygen vacancy and sn ~ ( 4 + )
  另一方面,氧等离子体处理使ito薄膜表面的富sn氧化物进一步氧化,形成稳定的sno ,减少了ito薄膜表面的氧空位和sn ~ ( 4 + )数量,使其功函数增大。
• Compared with pl of pure nanotube , the emission peak energy shift value was larger . this may result from the formation of oxygen vacancies in the nanotube during the process of surface - modification
  ( 2 )使用十六醇对纳米管钛酸进行了化学修饰，结果表明纳米管表面与十六醇发生酯化反应。
• The subst - itutional oxygen vacancies and tin contributing to its high conductivity . the high optical transmittance of ito films is a direct consequence of it being a wide band gap ( eg > 3ev )
  Ito结构中的氧空位和锡掺杂使得它具有很强的导电性，较大的能带间隙宽度( e _ g 3ev )使得它具有很强的光透明性。
• The uv - visible absorption spectrum showed the as - prepared aam templates were transparent within visible light , and the pl curve showed the as - prepared aam templates had a blue pl band in wavelength range of 400nm ~ 60qnm which originated from singly ionized oxygen vacancies
  从光致发光特性曲线发现，纳米孔阵列aam在400一600nm之间有一个蓝色发光带，该发光带来源于单离子氧空位。
• In the discussion of visible luminescence mechanism , in order to prove that the oxygen vacancies or defects distribute on the surface of nanocrystallites , we presented to prepare the zno thin films with doped mn and studied the photoluminescence of zno : mn
  在可见发光机制探讨中，为了证明氧空位或缺陷是分布在纳米晶表面，我们提出氧化锌中掺杂锰（ zno ： mn ） ，研究了zno ： mn薄膜的光致发光（ pl ） 。
• It was found from the experiment that , with the increasing of substrate temperature , there were more oxygen vacancies in the films , which lead the conductance of the sample become larger , and the absorb edge of zno thin films shifted toward higher wavelength ; with increasing of ar : o2 ratio , there were lesser oxygen vacancies in the films , which lead the absorb edge of zno thin films shifted toward lower wavelength
  实验还发现，随着衬底温度的升高，薄膜中产生的氧空位将会增多，使得zno薄膜的电导逐渐增大，而且其紫外透射吸收截止边带向高波长方向漂移；随着氩氧比例的增加，薄膜中的氧缺陷相对减少，薄膜的透射吸收截止边向低波长方向漂移。
• It was found from the experiment that , with the increasing of substrate temperature , there were more oxygen vacancies in the films , which lead the conductance of the sample become larger , and the absorb edge of ito thin films shifted toward lower wavelength ; with increasing of ar : o2 ratio , there were lesser oxygen vacancies in the films , which lead the absorb edge of ito thin films shifted toward lower wavelength
  实验还发现，在一定的温度范围内随着衬底温度的升高，薄膜中产生的氧空位将会增多，使得ito薄膜的电导逐渐增大，而且其紫外透射吸收截止边带向短波长方向漂移；随着氩氧比例的增加，薄膜中的氧缺陷相对减少，薄膜的透射吸收截止边向低波长方向漂移。
• The magnitude of the conductivity maximum increases and shifts to lower temperature with increasing sr content . in this paper , the electrical conductivity reaches maximum value at x = 0 . 4 . below the temperature corresponding to the maximum value , the electrical conductivity is found to follow the relationship for the small polaron hopping mechanism , charge compensation of oxygen vacancy dominates electrical conduction at high temperature , and oxygen vacancy acts as traps to catch carriers , resulting in the decrease of carriers concentration and mobility
  通过电学和热学性能测试结果表明，电导率随着sr含量的增加以及温度的变化都出现了极大值，在本论文中，在sr含量为0 . 4时电导率值最大，电导率最大值对应的温度随着sr含量的增加而降低，这是由于在低温下以小极化子导电机理为主，在高温阶段则是氧空位的电荷补偿占据主导作用，氧空位使得载流子的浓度和可动性减弱，从而导致电导率降低。
• With the increase of the amount of al , the intensity of the pl peak at 510nm increases . with the aid of ple we can suggest that pl peak at 370nm and 410nm are related to the oxygen vacancies , and 510nm peak originate from a complex co - function of al , si , and o . el devices have been fabricated on three types of silicon based oxide films ( ge - sio2 films , si - sio2 films , and al - sio2 films )
  用不同的方法制备的51一5102薄膜、 ge一510 :薄膜和al一51一5102薄膜，在较低的电压万均观察到了室温可见电致发光现象，峰位都在510nm左右，其峰位不因薄膜样品内所含颗粒的种类、薄膜的制备方法、偏压及后处理的影响，表明电致发光主要来源于电子和空穴在510 、基质中的发光中心的辐射复合发光。
• By examining the vacancy formation energy of three kinds of defect sno _ 2 ( 110 ) surface , the most energetically favorable defect surface is that the surface possesses the coexistence of bridging and in - plane oxygen vacancies , which is different with the traditional defect model by only removing bridging oxygen
  通过考察形成三种不同类型sno _ 2 ( 110 )缺陷表面的缺陷形成能,结果表明,形成同时具有桥氧和面氧缺陷的构型能量上最为有利,这与通常所认为的桥氧缺陷最为稳定不同。